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| DSEP 2x 31-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 2x 30 A VRRM = 300 V trr = 30 ns miniBLOC, SOT-227 B VRSM V 300 VRRM V 300 Type DSEP 2x 31-03A Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight Conditions TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -40...+150 150 -40...+150 A A A mJ A C C C W V~ Nm/lb.in. Nm/lb.in. g q q Features q q q q q q q TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical 100 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 q q International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 0.25 1 0.96 1.23 1.15 0.1 mA mA V V K/W K/W ns 7 A q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100C 30 q q Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 025 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 DSEP 2x 31-03A 60 A IF 40 TVJ=150C TVJ=100C TVJ= 25C 20 Qr 800 TVJ = 100C nC 600 IF = 60A IF = 30A 400 IF = 15A VR = 150V IRM 30 A 25 20 15 10 TVJ = 100C VR = 150V IF = 60A IF = 30A IF = 15A 200 5 0 0.0 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/ms 1000 800 diF/dt TVJ = 100C IF = 30A 1.2 s 1.0 tfr 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/ms 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.436 0.482 0.117 0.115 ti (s) 0.0055 0.009 0.0007 0.042 0.01 0.001 0.0001 0.00001 DSEP 2x31-03A 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case 025 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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